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IRF6620TR1PBF

Part No IRF6620TR1PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 20V 27A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs 2.7 mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Gate Charge (Qg) @ Vgs 42nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4130pF @ 10V
Power - Max 2.8W
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package DirectFET? Isometric MX
Manufacturer Device Package DIRECTFET? MX
Win Source Part Number 124161-IRF6620TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6620TR1PBF CAD Model

Description

The Infineon Technologies IRF6620TR1PBF is a HEXFET MOSFET N-Channel transistor with a drain to source voltage of 20V and a continuous drain current of 27A (Ta) or 150A (Tc).

  • Rds On: Low Rds On of 2.7 mOhm @ 27A, 10V
  • Gate Threshold Voltage: 2.45V @ 250μA
  • Package: DirectFET? Isometric MX
  • Temperature Range: -40°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Applications: Commonly used in power management and industrial applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7221 $60.2735
85+ $1.4137 $120.1645
130+ $1.3687 $177.9310
175+ $1.3248 $231.8400
230+ $1.2809 $294.6070
305+ $1.1481 $350.1705
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,650 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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