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Same model may have multiple batches, images only for reference.
IRF6623
Same model may have multiple batches, images only for reference.

IRF6623

Part No IRF6623
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 16A DIRECTFET
Datasheet
IRF6623 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1360pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 069318-IRF6623
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6623 CAD Model

Description

The Infineon Technologies 069318-IRF6623 is a MOSFET with N-channel polarity.

  • Power Dissipation: 1.4W (Ta) and 42W (Tc)
  • Usage: Commonly used in discrete semiconductor products
  • Supply and Demand Status: Balanced
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 5.7 mOhm @ 15A, 10V
  • Family: DirectFET ST family

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7905 $53.7150
70+ $1.4692 $102.8440
110+ $1.4233 $156.5630
150+ $1.3774 $206.6100
190+ $1.3314 $252.9660
255+ $1.1937 $304.3935
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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