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IRF7104TR

Name: IRF7104TR
Brand: Infineon Technologies
SKU: 159806
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7104TR
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2P-CH 20V 2.3A 8-SOIC
Datasheet	IRF7104TR Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	20V
Continuous Drain Current at 25°C	2.3A
Maximum Rds On at Id,Vgs	250 mOhm @ 1A, 10V
Gate-Source Threshold Voltage	3V @ 250μA
Max Gate Charge	25nC @ 10V
Max Input Capacitance	290pF @ 15V
Maximum Power Dissipation	2W
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Win Source Part Number	094357-IRF7104TR
Is this a common-used part?	Yes
Popularity	High
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF7104TR CAD Model

Description

The IRF7104TR is a dual P-channel MOSFET from Infineon Technologies with a drain-source breakdown voltage of 20V and a continuous drain current of 2.3A @ 25°C.

Maximum Rds On at Id,Vgs: 250 mOhm @ 1A, 10V
Maximum Power Dissipation: 2W
Operating Temperature Range: -55°C to 150°C (TJ)
Package: 8-SO
Mounting: SMD (SMT) technology
Supply and demand status: limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
335+	$0.1507	$50.4845
810+	$0.1237	$100.1970
1,255+	$0.1198	$150.3490
1,725+	$0.1160	$200.1000
2,235+	$0.1121	$250.5435
2,990+	$0.1005	$300.4950

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 10,038 pieces

MOQ: 335 pcs

Order Increment : 1 pcs

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Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
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