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IRF7313PBF Infineon Technologies IRF7313PBF Real Image IRF7313PBF real image10305
Same model may have multiple batches, images only for reference.
IRF7313PBF Infineon Technologies IRF7313PBF Real Image IRF7313PBF real image10305
IRF7313PBF Infineon Technologies IRF7313PBF Real Image IRF7313PBF real image10305
Same model may have multiple batches, images only for reference.

IRF7313PBF

Part No IRF7313PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.5A 8-SOIC
Datasheet
IRF7313PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A
Maximum Rds On at Id,Vgs 29 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 650pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046597-IRF7313PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7313PBF CAD Model

Description

The Infineon Technologies 430379 is a dual N-channel MOSFET transistor that is designed for use in a wide range of discrete semiconductor products.

  • Manufacturer: Infineon Technologies
  • Product Name: 430379
  • Package: 8-SO
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.5A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 33nC @ 10V
  • Maximum Input Capacitance: 650pF @ 25V
  • Maximum Rds On: 29 mOhm @ 5.8A, 10V
  • Recommendation: Not Recommended for New Designs
  • Operating Temperature: -55°C and 150°C

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230+ $0.4353 $100.1190
360+ $0.4206 $151.4160
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665+ $0.3765 $250.3725
830+ $0.3618 $300.2940
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