The Infineon Technologies IRF7338PBF is an N and P-Channel MOSFET that features a logic level gate.

• Package: 8-SO package
• Suitable for use in: discrete semiconductor products
• Supply and Demand Status: Balanced
• Drain-Source Breakdown Voltage: 12V
• Continuous Drain Current: 6.3A and 3A @ 25°C
• Maximum Power Dissipation: 2W
• Gate-Source Threshold Voltage: 1.5V @ 250μA
• Maximum Gate Charge: 8.6nC @ 4.5V
• Maximum Input Capacitance: 640pF @ 9V
• Maximum Rds On at Id,Vgs: 34 mOhm @ 6A, 4.5V
• Suitable For: Applications where a high-performance logic level N and P-Channel MOSFET is required