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Same model may have multiple batches, images only for reference.
IRF7350PBF
Same model may have multiple batches, images only for reference.

IRF7350PBF

Part No IRF7350PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 100V 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 2.1A, 1.5A
Maximum Rds On at Id,Vgs 210 mOhm @ 2.1A, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 28nC @ 10V
Max Input Capacitance 380pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 205313-IRF7350PBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 95
Ultra Librarian 3D Model Ultra Librarian IRF7350PBF CAD Model

Description

The IRF7350PBF is a N and P-Channel FET with a standard feature, manufactured by Infineon Technologies.

  • Component Status: now obsolete
  • Supply and Demand: limited
  • Suitable For: use in various applications such as DC-DC converters, motor control, and battery protection
  • Maximum Power Dissipation: 2W
  • Maximum Rds On at Id,Vgs: 210 mOhm @ 2.1A, 10V

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