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IRF7455PBF

Name: IRF7455PBF
Brand: Infineon Technologies
SKU: 159955
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7455PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 15A 8-SOIC
Datasheet	IRF7455PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube/Rail
Status	Not For New Designs
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	15A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V
Gate-Source Threshold Voltage	2V @ 250μA
Max Gate Charge	56nC @ 5V
Max Input Capacitance	3480pF @ 25V
Maximum Gate-Source Voltage	±12V
Power Dissipation (Max)	2.5W (Ta)
Maximum Rds On at Id,Vgs	7.5 mOhm @ 15A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	141453-IRF7455PBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF7455PBF CAD Model

Description

The Infineon Technologies IRF7455PBF is an N-Channel MOSFET that can handle a maximum power dissipation of 2.5W (Ta) and continuous drain current of 15A @ 25°C.

Drain-Source Breakdown Voltage: 30V
Maximum Rds On: 7.5 mOhm @ 15A, 10V
Package: 8-SO
Gate-Source Threshold Voltage: 2V @ 250μA
Maximum Gate Charge: 56nC @ 5V
Maximum Input Capacitance: 3480pF @ 25V
Commonly Used: Power management applications
Not for New Designs: Yes

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
12+	$4.3657	$52.3884
28+	$3.5821	$100.2988
44+	$3.4702	$152.6888
60+	$3.3583	$201.4980
78+	$3.2463	$253.2114
104+	$2.9105	$302.6920

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 5,580 pieces

MOQ: 12 pcs

Order Increment : 1 pcs

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