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IRF7455PBF

Part No IRF7455PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 56nC @ 5V
Max Input Capacitance 3480pF @ 25V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 141453-IRF7455PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7455PBF CAD Model

Description

The Infineon Technologies IRF7455PBF is an N-Channel MOSFET that can handle a maximum power dissipation of 2.5W (Ta) and continuous drain current of 15A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 7.5 mOhm @ 15A, 10V
  • Package: 8-SO
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 56nC @ 5V
  • Maximum Input Capacitance: 3480pF @ 25V
  • Commonly Used: Power management applications
  • Not for New Designs: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.3657 $52.3884
28+ $3.5821 $100.2988
44+ $3.4702 $152.6888
60+ $3.3583 $201.4980
78+ $3.2463 $253.2114
104+ $2.9105 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,580 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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