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IRF8313PBF

Part No IRF8313PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 9.7A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.7A
Maximum Rds On at Id,Vgs 15.5 mOhm @ 9.7A, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 90nC @ 4.5V
Max Input Capacitance 760pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 069413-IRF8313PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8313PBF CAD Model

Description

The Infineon Technologies IRF8313PBF is a dual N-Channel MOSFET with logic level gate feature.

  • Designed for: Use in power management applications
  • Continuous Drain Current @ 25°C: 9.7A
  • Maximum Rds On @ Id,Vgs: 15.5 mOhm @ 9.7A, 10V
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 90nC @ 4.5V
  • Package: 8-SO
  • Maximum Input Capacitance: 760pF @ 15V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3760 $52.2720
45+ $2.2256 $100.1520
70+ $2.1504 $150.5280
100+ $2.0000 $200.0000
130+ $1.9249 $250.2370
163+ $1.8497 $301.5011
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,650 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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