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Same model may have multiple batches, images only for reference.
IRF9540NLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9540NLPBF

Part No IRF9540NLPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET POWER MOSFET (VDSS = -100V , RDS(on) = 117mΩ , ID = -23A ) | MOSFET P-CH 100V 23A TO262-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 23A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 117mOhm at 14A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 110nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1450pF at 25V
Power Dissipation (Maximum) 3.1W, 110W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-262
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187446-IRF9540NLPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9540NLPBF CAD Model

Description

The Infineon IRF9540NLPBF is a P-channel power MOSFET designed for use in high voltage, high current applications.

  • Drain-Source Voltage: 100V
  • Continuous Drain Current: 23A
  • On-State Resistance: 117mOhm
  • Gate Charge: 110nC
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Compliance: RoHS compliant

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13+ $8.1160 $105.5080
20+ $7.8624 $157.2480
27+ $7.6087 $205.4349
34+ $7.3551 $250.0734
46+ $6.5942 $303.3332
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