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Same model may have multiple batches, images only for reference.
IRF9910PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9910PBF

Part No IRF9910PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET®Power MOSFET | MOSFET 2N-CH 20V 10A/12A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 10A, 12A
Rds On (Maximum) at Id, Vgs 13.4mOhm at 10A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.55V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 900pF at 10V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF9910PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187463-IRF9910PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9910PBF CAD Model

Description

The IRF9910PBF is a dual N-channel power MOSFET designed for use in high voltage, high current applications from Infineon.

  • Drain-Source Voltage: 20V
  • Continuous Drain Current: 12A
  • On-State Resistance: 13.4mOhm
  • Gate Charge: 11nC
  • Package: 8-SOIC
  • Compliance: RoHS

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3284 $51.2248
53+ $1.9105 $101.2565
82+ $1.8508 $151.7656
112+ $1.7911 $200.6032
145+ $1.7314 $251.0530
194+ $1.5523 $301.1462
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Availability: 12,220 pieces
MOQ: 22 pcs
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