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Same model may have multiple batches, images only for reference.
IRF7380PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7380PBF

Part No IRF7380PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET®Power MOSFET | MOSFET 2N-CH 80V 3.6A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 3.6A
Rds On (Maximum) at Id, Vgs 73mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 23nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 660pF at 25V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7380PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187242-IRF7380PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7380PBF CAD Model

Description

The Infineon Technologies IRF7380PBF is a dual N-Channel MOSFET transistor with an 8-SO package.

  • Power: 2W
  • Vds - Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 3.6A
  • Maximum Rds On: 73mOhm @ 2.2A, 10V
  • Gate Source Voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 23nC @ 10V
  • Suitable for: discrete semiconductor products

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350+ $0.2858 $100.0300
545+ $0.2760 $150.4200
785+ $0.2563 $201.1955
1,015+ $0.2464 $250.0960
1,270+ $0.2366 $300.4820
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Availability: 108,240 pieces
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