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Same model may have multiple batches, images only for reference.
IRF9952TR Real Image
Same model may have multiple batches, images only for reference.

IRF9952TR

Part No IRF9952TR
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description MOSFET N/P-CH 30V 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N and P-Channel
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 3.5A, 2.3A
Rds On (Maximum) at Id, Vgs 100mOhm at 2.2A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 14nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 190pF at 15V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 718716-IRF9952TR
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF9952TR CAD Model

Description

The Infineon Technologies IRF9952TR is an obsolete electronic component designed for power applications. Infineon Technologies

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A
  • Package: 8-SOIC
  • Supply and Demand Status: sufficient
  • Ideal for: N and P-Channel transistor polarity applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2896 $57.9200
490+ $0.2377 $116.4730
755+ $0.2302 $173.8010
1,040+ $0.2228 $231.7120
1,345+ $0.2154 $289.7130
1,795+ $0.1931 $346.6145
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,300 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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