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FDZ2554P

Part No FDZ2554P
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description Monolithic Common Drain P-Channel 2.5V Specified PowerTrench | MOSFET 2P-CH 20V 6.5A BGA
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tape and Reel
Status Obsolete
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 6.5A
Rds On (Maximum) at Id, Vgs 28mOhm at 6.5A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 1900pF at 10V
Maximum Power 2.1W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 18-WFBGA
Supplier Device Package 18-BGA (2.5x4)
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1173953-FDZ2554P
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FDZ2554P CAD Model

Description

The ON Semiconductor FDZ2554P is a high-performance, P-Channel PowerTrench® MOSFET designed for power management applications. This compact and efficient power MOSFET is ideal for a wide range of applications, including load switch, power conversion, and battery management systems. It is particularly well-suited for portable electronics where low on-resistance and minimal power loss are critical.

Key Features

  • Low On-Resistance: The FDZ2554P features an extremely low on-resistance of just 8 mΩ at VGS = -4.5V, which enhances its efficiency in power-sensitive applications.
  • High Power Dissipation: With a power dissipation of 2.5W, this MOSFET can handle significant power for its size, making it suitable for demanding applications.
  • Compact Footprint: The MOSFET comes in a small 1.6 x 1.6 mm WL-CSP package, making it ideal for space-constrained applications.
  • Voltage Rating: It has a drain-source voltage (VDS) rating of -20V, which allows it to be used in a variety of circuits with different voltage levels.
  • Gate Charge: The device features a low total gate charge (Qg) that helps to minimize switching losses and improves overall system efficiency.

Applications

  • Power Management for Portable Devices
  • DC/DC Converters
  • Battery Management Systems
  • Load Switching
  • Smartphones and Tablets

The FDZ2554P is manufactured with ON Semiconductor's proprietary PowerTrench® process, which enables the MOSFET to operate with a low gate charge and low on-resistance, resulting in reduced conduction and switching losses. This process, combined with the device's package design, ensures excellent thermal performance and reliability.

Overall, the ON Semiconductor FDZ2554P P-Channel PowerTrench® MOSFET is an excellent choice for designers looking to optimize power efficiency and space in their applications. Its robust performance and small form factor make it a versatile component for a variety of power management tasks.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5064 $60.2560
95+ $1.2361 $117.4295
145+ $1.1974 $173.6230
200+ $1.1589 $231.7800
260+ $1.1201 $291.2260
350+ $1.0043 $351.5050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,700 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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