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IRFB38N20D Infineon Technologies IRFB38N20D Real Image
Same model may have multiple batches, images only for reference.
IRFB38N20D Infineon Technologies IRFB38N20D Real Image
IRFB38N20D Infineon Technologies IRFB38N20D Real Image
Same model may have multiple batches, images only for reference.

IRFB38N20D

Part No IRFB38N20D
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 43A TO-220AB
Datasheet
IRFB38N20D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 91nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 300W (Tc)
Maximum Rds On at Id,Vgs 54 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205340-IRFB38N20D
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFB38N20D CAD Model

Description

The IRFB38N20D is an N-channel MOSFET made by Infineon Technologies.

  • Maximum Power Dissipation: 3.8W (Ta) and 300W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Application: Discrete semiconductor products such as power supplies, motor drives, and lighting ballasts
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Package: TO-220AB
  • Gate-Source Threshold Voltage: 5V @ 250μA

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Quantity Unit Price Ext. Price
115+ $0.4354 $50.0710
250+ $0.4074 $101.8500
385+ $0.3933 $151.4205
550+ $0.3652 $200.8600
715+ $0.3512 $251.1080
890+ $0.3371 $300.0190
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Availability: 36,260 pieces
MOQ: 115 pcs
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