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IRFH5104TR2PBF

Part No IRFH5104TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 24A PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 24A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 3120pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 114W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-VQFN Exposed Pad
Win Source Part Number 1046870-IRFH5104TR2PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5104TR2PBF CAD Model

Description

The Infineon Technologies MOSFET, part number IRFH5104TR2PBF, is a high-performance component designed to provide reliable operation in a variety of applications.

  • Maximum Power Dissipation: 3.6W (Ta), 114W (Tc)
  • Package: PQFN (5x6)
  • Product Status: Obsolete (EOL)
  • Demand: Medium
  • Maximum Rds On @ Id,Vgs: 3.5 mOhm @ 50A, 10V

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