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IRFH6200TRPBF

Part No IRFH6200TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 45A 8-PQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 49A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.1V @ 150μA
Max Gate Charge 230nC @ 4.5V
Max Input Capacitance 10890pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 0.95 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 1046883-IRFH6200TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH6200TRPBF CAD Model

Description

The Infineon Technologies IRFH6200TRPBF is a N-Channel MOSFET that is packaged in a PQFN (5x6) case.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (Ta): 49A @ 25°C
  • Continuous Drain Current (Tc): 100A @ 25°C
  • Maximum Rds On at Id,Vgs: 0.95 mOhm @ 50A and 10V
  • Maximum Gate-Source Voltage: ±12V
  • Gate-Source Threshold Voltage: 1.1V @ 150μA
  • Maximum Gate Charge: 230nC @ 4.5V
  • Maximum Input Capacitance: 10890pF @ 10V
  • Power Dissipation (Ta): 3.6W
  • Power Dissipation (Tc): 156W
  • Operating Temperature Range (TJ): -55°C to 150°C
  • Status: Active
  • Packaging: Reel - TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2360 $55.6200
100+ $1.0141 $101.4100
155+ $0.9824 $152.2720
215+ $0.9508 $204.4220
275+ $0.9191 $252.7525
365+ $0.8240 $300.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 31,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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