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Same model may have multiple batches, images only for reference.
IRFH8325TR2PBF Real Image
Same model may have multiple batches, images only for reference.

IRFH8325TR2PBF

Part No IRFH8325TR2PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A 5X6 PQFN
Datasheet
IRFH8325TR2PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 2487pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 54W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 126312-IRFH8325TR2PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFH8325TR2PBF CAD Model

Description

The Infineon Technologies IRFH8325TR2PBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 21A (Ta), 82A (Tc) at 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 21A (Ta), 82A (Tc) @ 25°C
  • Power Dissipation: 3.6W (Ta) and 54W (Tc)
  • Package: PQFN (5x6)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 5 mOhm @ 20A, 10V
  • Drive Voltage: 4.5V, 10V
  • Status: Obsolete (EOL)
  • Availability: Limited availability

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.6052 $60.5200
235+ $0.4967 $116.7245
360+ $0.4816 $173.3760
500+ $0.4655 $232.7500
645+ $0.4505 $290.5725
860+ $0.4043 $347.6980
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Availability: 16,000 pieces
MOQ: 100 pcs
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