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Same model may have multiple batches, images only for reference.
IRFI4410ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFI4410ZPBF

Part No IRFI4410ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 43A TO-220FP
Datasheet
IRFI4410ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 4910pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 9.3 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB Full-Pak
Dimension TO-220-3 Full Pack
Win Source Part Number 069485-IRFI4410ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI4410ZPBF CAD Model

Description

The Infineon IRFI4410ZPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 47W @ Tc
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 43A @ Tc
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Rds On at Id,Vgs: 9.3 mOhm @ 26A, 10V
  • Package: TO-220AB Full-Pak case
  • Mounting: through-hole
  • Temperature Range: -55°C to 175°C (TJ)
  • Applications: such as power supplies, motor control, and lighting systems.

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