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Same model may have multiple batches, images only for reference.
TSM160N10CZ C0G
Same model may have multiple batches, images only for reference.

TSM160N10CZ C0G

Part No TSM160N10CZ C0G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
TSM160N10CZ C0G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 154nC @ 10V
Max Input Capacitance 9840pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1114714-TSM160N10CZ C0G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM160N10CZ C0G CAD Model

Description

The Taiwan Semiconductor, with Win Source Part Number 1114714-TSM160N10CZ C0G, is an active component under the Discrete Semiconductor Products category.

  • Technology: MOSFET
  • Polarity: N-Channel
  • Dimension: TO-220-3
  • Temperature Range: -55°C to 175°C (TJ)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 160A (Tc)
  • Maximum Rds On: 5.5 mOhm @ 30A, 10V
  • Supply and Demand Status: Balanced

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Availability: 21,600 pieces
MOQ: 14 pcs
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