The IRFP450Z is a 500V, 0.29 Ω, 14A, Avalanche Rated HEXFET Power MOSFET from Infineon Technologies. It is designed for high voltage, high speed power switching applications. Its features include dynamic dv/dt rating, repetitive avalanche rated, and ease of paralleling. The IRFP450Z comes in a TO-247AC package.

Applications

• Uninterruptible Power Supplies (UPS)
• High Voltage Inverters
• Power Factor Correction (PFC) circuits
• Motor Control circuits
• High-frequency welding power supplies

Features

• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead-Free

Benefits

• Improved system reliability due to its avalanche capability and dynamic dv/dt rating, which protect against voltage spikes and transient conditions.
• High efficiency switching due to the fast switching speed of the MOSFET, which reduces switching losses.
• Simplified circuit design and ease of use due to the simple drive requirements of the MOSFET.
• Increased power handling capability when paralleled, allowing for higher current applications.
• Environmentally friendly due to the lead-free design.

Technical Specifications

The IRFP450Z is an N-channel MOSFET with a drain-source voltage (Vds) rating of 500V and a continuous drain current (Id) of 14A. Its on-resistance (Rds(on)) is 0.29 Ω at a gate-source voltage (Vgs) of 10V. The gate charge (Qg) is typically 68 nC. It has a TO-247AC package. Its operating junction temperature ranges from -55°C to +150°C.

The Infineon IRFP450Z is a robust and reliable power MOSFET suitable for demanding high-voltage, high-speed power switching applications.