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Same model may have multiple batches, images only for reference.
IRFR1010ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR1010ZPBF

Part No IRFR1010ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 42A DPAK
Datasheet
IRFR1010ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 140553-IRFR1010ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR1010ZPBF CAD Model

Description

The Infineon Technologies IRFR1010ZPBF is a MOSFET technology device with N-Channel polarity.

  • Power Dissipation: 140W (Tc)
  • Drive Voltage: 10V
  • Package: D-Pak
  • Mounting Technology: SMD (SMT)
  • Maximum Rds On at Id,Vgs: 7.5 mOhm @ 42A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Lifecycle: Not for new designs
  • Supply: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8951 $58.1815
140+ $0.8374 $117.2360
215+ $0.8085 $173.8275
310+ $0.7508 $232.7480
400+ $0.7219 $288.7600
500+ $0.6930 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,400 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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