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Same model may have multiple batches, images only for reference.
IRFR3711PBF Real Image
Same model may have multiple batches, images only for reference.

IRFR3711PBF

Part No IRFR3711PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 100A DPAK
Datasheet
IRFR3711PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 094297-IRFR3711PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR3711PBF CAD Model

Description

The Infineon Technologies IRFR3711PBF is an N-channel polarity MOSFET designed for use in discrete semiconductor products.

  • Mounting: surface-mount technology
  • Package: D-Pak case
  • Operating Temperature Range: -55°C to 150°C
  • Infineon Technologies IRFR3711PBF is an obsolete (EOL) part and has: high popularity in the market
  • Halogen-Free Compliant: This device is halogen-free compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,850 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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