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Same model may have multiple batches, images only for reference.
IRFR4104TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR4104TRPBF

Part No IRFR4104TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 42A DPAK
Datasheet
IRFR4104TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 89nC @ 10V
Max Input Capacitance 2950pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 5.5 mOhm @ 42A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017684-IRFR4104TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFR4104TRPBF CAD Model

Description

The Infineon Technologies IRFR4104TRPBF is an N-channel MOSFET from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 40V
  • Maximum Continuous Drain Current: 42A
  • Package: D-Pak package
  • Maximum Power Dissipation: 140W
  • Gate-Source Threshold Voltage: 4V
  • Maximum Gate Charge: 89nC @ 10V
  • Maximum Rds On: 5.5 mOhm @ 42A and 10V
  • Operating Temperature Range: -55°C to 175°C
  • Suitable for use in: various applications such as motor control, power supplies, and lighting systems

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8703 $52.2180
145+ $0.7141 $103.5445
220+ $0.6918 $152.1960
300+ $0.6695 $200.8500
390+ $0.6471 $252.3690
520+ $0.5802 $301.7040
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