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Same model may have multiple batches, images only for reference.
IRFR4105TRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFR4105TRLPBF

Part No IRFR4105TRLPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Ultra Low On-Resistance | MOSFET N-CH 55V 27A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 27A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 45mOhm at 16A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 34nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 25V
Power Dissipation (Maximum) 68W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D-Pak
Manufacturer Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187933-IRFR4105TRLPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFR4105TRLPBF CAD Model

Description

The Infineon Technologies IRFR4105TRLPBF is a high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for use in power electronics applications. IRFR4105TRLPBF from Infineon Technologies.

  • Type: MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 27A
  • Gate Charge @ 10V: 34nC
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Power Dissipation: 68W
  • Input Capacitance (Ciss) (Maximum) @ 25V: 700pF
  • Operating Temperature: -55°C to 175°C

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