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Same model may have multiple batches, images only for reference.
IRFS3307PBF Real Image
Same model may have multiple batches, images only for reference.

IRFS3307PBF

Part No IRFS3307PBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description High Efficiency Synchronous Rectification in SMPS | MOSFET N-CH 75V 120A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 120A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 6.3mOhm at 75A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 150μA
Gate Charge (Qg) (Maximum) at Vgs 180nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5150pF at 50V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188000-IRFS3307PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS3307PBF CAD Model

Description

The Infineon Technologies electronic component (product) with Win Source Part Number 1188000-IRFS3307PBF is a MOSFET technology product with N-channel transistor polarity.

  • Packaging: Tube
  • Mounting Style: SMD
  • Drive Voltage: 10V
  • Operating Temperature Range: -55°C ~ 175°C
  • Manufacturer Homepage: www.irf.com
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 50
  • Maximum Power Dissipation: 200W
  • Vds - Drain-Source Breakdown Voltage: 75V
  • Id - Continuous Drain Current: 120A
  • Rds On (Maximum) @ Id, Vgs: 6.3mOhm @ 75A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 150μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 180nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5150pF @ 50V

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