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Same model may have multiple batches, images only for reference.
IRFS4615PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFS4615PBF

Part No IRFS4615PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 33A D2-PAK
Datasheet
IRFS4615PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 1750pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 144W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 083672-IRFS4615PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFS4615PBF CAD Model

Description

The IRFS4615PBF MOSFET is a N-channel power transistor from Infineon Technologies, commonly used in power management applications.

  • Maximum Power Dissipation: 144W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current @ 25°C: 33A (Tc)
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Rds On @ Id,Vgs: 42 mOhm @ 21A, 10V
  • Package: D2PAK package
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging: tube/rail packaging
  • Category: Discrete Semiconductor Products
  • Popularity: high popularity in the market.

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