The Infineon Technologies IRFU5410PBF is a P-channel MOSFET transistor in an IPAK package. It has a drain-source breakdown voltage of 100V and a continuous drain current of 13A @ 25°C. The gate-source threshold voltage is 4V @ 250μA and the maximum gate-source voltage is ±20V. The maximum Rds On @ Id, Vgs is 205 mOhm @ 7.8A and 10V. This MOSFET transistor is used in various power applications. It has a power dissipation of 66W (Tc) and can operate in a temperature range of -55°C to 150°C (TJ). The IRFU5410PBF is a high popularity MOSFET transistor and is supplied in a tube/rail packaging.