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Same model may have multiple batches, images only for reference.
IRGP4650D-EPBF Real Image
Same model may have multiple batches, images only for reference.

IRGP4650D-EPBF

Part No IRGP4650D-EPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description INSULATED GATE BIPOLARTRANSIST WITH ULTRAFAST SOFT RECOVERY DIODE | IGBT 600V 76A 268W TO247AD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 76A
Current - Collector Pulsed (Icm) 105A
Vce(on) (Maximum) at Vge, Ic 1.9V at 15V, 35A
Maximum Power 268W
Switching Energy 390μJ (on), 632μJ (off)
Input Type Standard
Gate Charge 104nC
Td (on/off) at 25°C 46ns/105ns
Test Condition 400V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr) 120ns
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247AD
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1188373-IRGP4650D-EPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian IRGP4650D-EPBF CAD Model

Description

The Infineon Technologies IRGP4650D-EPBF is a through-hole IGBT transistor used in power management, motor drive and control applications.

  • Maximum Collector Current: 76A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Reverse Recovery Time: 120ns
  • Switching Energy: 390μJ (on), 632μJ (off)
  • Gate Charge: 104nC
  • Operating Temperature: -55°C to 175°C
  • Package: TO-247AD
  • Maximum Power: 268W
  • Vce(on) (Maximum) @ Vge, Ic: 1.9V @ 15V, 35A
  • Pack Size: 400
  • Popularity: Medium

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Availability: 26,400 pieces
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