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FDB6670S

Part No FDB6670S
Manufacturer Fairchild/ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Fairchild/ON Semiconductor
Series PowerTrench®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 62A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm@ 31A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2639 pF @ 15 V
Power Dissipation (Max) 62.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AB
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 800 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 128899-FDB6670S
Ultra Librarian 3D Model Ultra Librarian FDB6670S CAD Model

Description

Overview

Designed to deliver top-notch performance, the FDB6670S is a versatile N-channel MOSFET tailored for efficiency and speed. It combines low on-state resistance with excellent thermal properties, ensuring reliability in a range of applications.

Features and Benefits

  • Low on-state resistance minimizing energy waste
  • High thermal regulation for extensive use without overheating
  • Compact and durable package for diverse applications

Applications

  • Electric vehicle components
  • Solar inverters
  • Computer power management

Additional Details

The FDB6670S is engineered for projects where precise power control and robust performance are critical. Its design supports long-term stability, even in challenging thermal conditions.

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