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Same model may have multiple batches, images only for reference.
MS2472
Same model may have multiple batches, images only for reference.

MS2472

Part No MS2472
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 65V 1.15GHZ M112 / RF Transistor NPN 65V 40A 1.025GHz ~ 1.15GHz 1350W Chassis Mount M112
Datasheet
MS2472 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr Microsemi Corporation
Package Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Frequency - Transition 1.025GHz ~ 1.15GHz
Gain 5.6dB
Power - Max 1350W
DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 250mA, 5V
Current - Collector (Ic) (Max) 40A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case M112
Supplier Device Package M112
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Win Source Part Number 928125-MS2472
Ultra Librarian 3D Model Ultra Librarian MS2472 CAD Model

Description

The MS2472 is an NPN bipolar RF transistor in the M112 package.

  • Maximum Power Rating: 1350W
  • Collector-Emitter Breakdown Voltage: 65V
  • Maximum Collector Current: 40A
  • DC Current Gain: 5 @ 250mA and 5V
  • Frequency Transition: 1.025GHz to 1.15GHz
  • Gain: 5.6dB
  • Mounting Type: chassis mount
  • Packaging: bulk
  • Package Quantity: 1 piece

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Quantity Unit Price Ext. Price
1+ $845.9155 $845.9155
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Availability: 21 pieces
Order Increment : 1 pcs
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