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IRGP50B60PD1PBF Real Image IRGP50B60PD1PBF real image
Same model may have multiple batches, images only for reference.
IRGP50B60PD1PBF Real Image IRGP50B60PD1PBF real image
IRGP50B60PD1PBF Real Image IRGP50B60PD1PBF real image
Same model may have multiple batches, images only for reference.

IRGP50B60PD1PBF

Part No IRGP50B60PD1PBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 75A 390W TO247AC
Datasheet
IRGP50B60PD1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 75A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.85V @ 15V, 50A
Maximum Power Dissipation 390W
Total Switching Energy(Ets) 255μJ (on), 375μJ (off)
Input Type Standard
Gate Charge 205nC
Turn-on and Turn-off delay time 30ns/130ns
Testing Conditions 390V, 33A, 3.3 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 016699-IRGP50B60PD1PBF
Family Name IRGP50B60PD1
Introduction Date June 02, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRGP50B60PD1PBF CAD Model

Description

The Infineon Technologies IRGP50B60PD1PBF is an NPT IGBT transistor with a maximum current collector of 75A and a VCEO maximum collector-emitter breakdown voltage of 600V. It has a gate charge of 205nC and is packaged in a TO-247AC case.

  • Reverse Recovery Time: 42ns
  • Application: suitable for use in applications such as power supplies, inverters, and motor control circuits.
  • Popularity: high
  • Alternatives: AUIRGP50B60PD1, STGW45HF60WDI, and STGW45HF60WD.

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