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Same model may have multiple batches, images only for reference.
IRGPS40B120UDP Real Image
Same model may have multiple batches, images only for reference.

IRGPS40B120UDP

Part No IRGPS40B120UDP
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 80A 595W SUPER247
Datasheet
IRGPS40B120UDP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 3.7V @ 15V, 50A
Maximum Power Dissipation 595W
Total Switching Energy(Ets) 1.4mJ (on), 1.65mJ (off)
Input Type Standard
Gate Charge 340nC
Testing Conditions 600V, 40A, 4.7 Ohm, 15V
Reverse Recovery Time (trr) 180ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package SUPER-247 (TO-274AA)
Win Source Part Number 069679-IRGPS40B120UDP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGPS40B120UDP CAD Model

Description

The Infineon Technologies 069679-IRGPS40B120UDP is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for use in a variety of applications.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 80A
  • Maximum Power Dissipation: 595W
  • Package: SUPER-247 (TO-274AA)
  • Mounting: Through-Hole
  • Gate Charge: 340nC
  • Total Switching Energy: 1.4mJ (on) and 1.65mJ (off)
The Infineon Technologies 069679-IRGPS40B120UDP is an active product and is suitable for high-power applications.

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