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IRGS8B60KTRLPBF Real Image1 IRGS8B60KTRLPBF Real Image2
Same model may have multiple batches, images only for reference.
IRGS8B60KTRLPBF Real Image1 IRGS8B60KTRLPBF Real Image2
IRGS8B60KTRLPBF Real Image1 IRGS8B60KTRLPBF Real Image2
Same model may have multiple batches, images only for reference.

IRGS8B60KTRLPBF

Part No IRGS8B60KTRLPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 28A 167W D2PAK
Datasheet
IRGS8B60KTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 28A
Pulsed Collector Current 34A
Collector-emitter saturation voltage(Max) 2.2V @ 15V, 8A
Maximum Power Dissipation 167W
Total Switching Energy(Ets) 160μJ (on), 160μJ (off)
Input Type Standard
Gate Charge 29nc
Turn-on and Turn-off delay time 23ns/140ns
Testing Conditions 400V, 8A, 50 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Win Source Part Number 103259-IRGS8B60KTRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRGS8B60KTRLPBF CAD Model

Description

The Infineon Technologies IRGS8B60KTRLPBF is a NPT IGBT with a maximum current collector of 28A and a maximum power dissipation of 167W.

  • Maximum Current Collector: 28A
  • Maximum Power Dissipation: 167W
  • Mounting: Surface-Mounting
  • Package: D2PAK
  • Input Type: Standard
  • Gate Charge: 29nC
  • Collector-Emitter Saturation Voltage: 2.2V @ 15V, 8A
  • Turn-On Delay Time: 23ns
  • Turn-Off Delay Time: 140ns
  • Total Switching Energy: 160μJ (on), 160μJ (off)
  • Testing Conditions: 400V, 8A, 50 Ohm, 15V
  • Category: Discrete Semiconductor Products
  • Popularity: Medium

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