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Same model may have multiple batches, images only for reference.
IRL3103S Real Image
Same model may have multiple batches, images only for reference.

IRL3103S

Part No IRL3103S
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) | MOSFET N-CH 30V 64A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 64A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 12mOhm at 34A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 33nC at 4.5V
Gate Source Voltage (Maximum) ±16V
Input Capacitance (Ciss) (Maximum) at Vds 1650pF at 25V
Power Dissipation (Maximum) 94W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188470-IRL3103S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL3103S CAD Model

Description

The Infineon Technologies 1188470-IRL3103S is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and an input capacitance of 1650pF @ 25V.

  • FET Feature: Not specified
  • Drive Voltage: 4.5V and 10V
  • Package: D2PAK
  • Operating Temperature: -55°C to 175°C
  • Power Dissipation: 94W
  • Gate Source Voltage: ±16V
  • Gate Charge: 33nC @ 4.5V
  • Continuous Drain Current: 64A
  • Status: Obsolete
  • Popularity: Medium

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