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Same model may have multiple batches, images only for reference.
IRL3715ZSPBF Real Image
Same model may have multiple batches, images only for reference.

IRL3715ZSPBF

Part No IRL3715ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 50A D2PAK
Datasheet
IRL3715ZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047489-IRL3715ZSPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRL3715ZSPBF CAD Model

Description

The Infineon Technologies IRL3715ZSPBF is an N-Channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 45W (Tc)
  • Continuous Drain Current: Up to 50A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Rds On: 11 mOhm @ 15A, 10V
  • Package: D2PAK case
  • Mounting: SMD (SMT) technology
  • Lifecycle Status: Obsolete (EOL)
  • Popularity Rating: Medium
  • Supply and Demand Status: balanced
  • Package Quantity: 50 units

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26+ $5.9303 $154.1878
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46+ $5.5477 $255.1942
61+ $4.9738 $303.4018
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Availability: 2,820 pieces
MOQ: 7 pcs
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