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Same model may have multiple batches, images only for reference.
IRL520NL Real Image
Same model may have multiple batches, images only for reference.

IRL520NL

Part No IRL520NL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 10A TO-262
Datasheet
IRL520NL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 20nC @ 5V
Max Input Capacitance 440pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3.8W (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 180 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1047502-IRL520NL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRL520NL CAD Model

Description

The Infineon Technologies IRL520NL is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 10A (Tc) @ 25°C.

  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 20nC @ 5V
  • Maximum Input Capacitance: 440pF @ 25V
  • Maximum Rds On @ Id, Vgs: 180 mOhm @ 6A, 10V
  • Package: TO-262 case
  • Suitable for: use in discrete semiconductor products.

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