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Same model may have multiple batches, images only for reference.
IRL530NSPBF Real Image
Same model may have multiple batches, images only for reference.

IRL530NSPBF

Part No IRL530NSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A D2PAK
Datasheet
IRL530NSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 34nC @ 5V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 79W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 040795-IRL530NSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRL530NSPBF CAD Model

Description

The Infineon Technologies IRL530NSPBF is a MOSFET integrated circuit designed for use in surface mount devices.

  • Power Dissipation: 3.8W (Ta), 79W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Polarity: N-Channel
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 4V, 10V
  • Package: D2PAK
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current at 25°C: 17A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 34nC @ 5V
  • Maximum Input Capacitance: 800pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 100 mOhm @ 9A, 10V

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Quantity Unit Price Ext. Price
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42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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