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Same model may have multiple batches, images only for reference.
IRLB4132PBF Real Image
Same model may have multiple batches, images only for reference.

IRLB4132PBF

Part No IRLB4132PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 78A TO220
Datasheet
IRLB4132PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 54nC @ 4.5V
Max Input Capacitance 5110pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040801-IRLB4132PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRLB4132
Introduction Date March 08, 2016
ECCN EAR99
Country of Origin China
Estimated EOL Date Not Applicable
Ultra Librarian 3D Model Ultra Librarian IRLB4132PBF CAD Model

Description

Infineon Technologies presents the IRLB4132PBF MOSFET, an N-channel device that is suitable for use in a range of electronic applications.

  • Maximum Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 78A (Tc) @ 25°C
  • Maximum Rds On: 3.5 mOhm @ 40A and 10V
  • Package: TO-220AB case
  • Mounting: through-hole technology
  • Maximum Gate Charge: 54nC @ 4.5V
  • Maximum Input Capacitance: 5110pF @ 15V

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180+ $0.5617 $101.1060
280+ $0.5442 $152.3760
380+ $0.5266 $200.1080
495+ $0.5091 $252.0045
660+ $0.4564 $301.2240
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