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IRLU3410PBF

Part No IRLU3410PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A I-PAK
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 34nC @ 5V
Max Input Capacitance 800pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1047678-IRLU3410PBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRLU3410PBF CAD Model

Description

The Infineon Technologies IRLU3410PBF MOSFET is a high-power N-Channel device that is designed to operate in a variety of electronic applications.

  • Maximum Power Dissipation: 79W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±16V
  • Maximum Input Capacitance: 800pF @ 25V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 34nC @ 5V
  • Package: IPAK (TO-251)
  • Mounting Type: Through-hole technology
  • Temperature Range: -55°C to 175°C (TJ)
  • Suitable for: Discrete semiconductor products
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0025 $50.1250
125+ $0.8225 $102.8125
190+ $0.7968 $151.3920
260+ $0.7711 $200.4860
340+ $0.7454 $253.4360
450+ $0.6683 $300.7350
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,099 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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