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DMT6016LSS-13

Part No DMT6016LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 9.2A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 864pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1033884-DMT6016LSS-13
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMT6016LSS-13 CAD Model

Description

Introducing the DMT6016LSS-13 MOSFET from Diodes Incorporated

The DMT6016LSS-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed by the renowned semiconductor manufacturer, Diodes Incorporated. This cutting-edge component is part of Diodes Incorporated's extensive MOSFET product line, which is well-regarded for its efficiency, reliability, and innovation in power management technology.

Constructed with advanced trench technology, the DMT6016LSS-13 is engineered to deliver optimal performance with a low on-resistance (R<sub>DS(on)) and a high continuous drain current (I<sub>D). This combination ensures that the device operates with high efficiency, making it an ideal choice for a wide range of power applications, including power supplies, DC-DC converters, and load switches, among others.

The device is housed in an SOP-8 package, which is known for its small footprint and low profile, making it suitable for space-constrained applications. The package is also RoHS compliant, ensuring that it meets the latest environmental standards and regulations.

Key features of the DMT6016LSS-13 include:

  • 60V Drain-Source Breakdown Voltage (V<sub>BR(DSS))
  • Low On-Resistance (R<sub>DS(on)) at V<sub>GS=10V
  • High Continuous Drain Current (I<sub>D) of up to 9.4A
  • Fast Switching Capabilities
  • Excellent Thermal Performance
  • Gate-Source Voltage (V<sub>GS) of ±20V

The DMT6016LSS-13 also features built-in protection against overcurrent and overtemperature conditions, enhancing its durability and reliability in demanding environments. Its low gate charge (Q<sub>G) and low threshold voltage (V<sub>TH) facilitate efficient power management and contribute to the reduction of switching losses, which is critical for energy-sensitive designs.

Diodes Incorporated's commitment to quality and performance is reflected in the DMT6016LSS-13, making it a prime choice for designers seeking a high-efficiency power MOSFET that does not compromise on performance or reliability. Whether for industrial, commercial, or consumer applications, the DMT6016LSS-13 is poised to deliver the power management solutions required for today's innovative electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5040 $50.4000
245+ $0.4135 $101.3075
375+ $0.4006 $150.2250
520+ $0.3877 $201.6040
670+ $0.3748 $251.1160
895+ $0.3360 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,650 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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