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Same model may have multiple batches, images only for reference.
SIDC11D60SIC3
Same model may have multiple batches, images only for reference.

SIDC11D60SIC3

Part No SIDC11D60SIC3
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Datasheet
SIDC11D60SIC3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Package Bulk
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 4A (DC)
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 4 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 600 V
Capacitance @ Vr, F 150pF @ 1V, 1MHz
Mounting SMD (SMT)
Package / Case Die
Supplier Device Package Sawn on foil
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number SIDC11
Other Names SP000013868
Standard Package 3,459
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1282555-SIDC11D60SIC3
Ultra Librarian 3D Model Ultra Librarian SIDC11D60SIC3 CAD Model

Description

The SIDC11D60SIC3 is a silicon carbide Schottky diode from Infineon Technologies.

  • Maximum DC reverse voltage (Vr): 600 V
  • Average rectified current (Io): 4A (DC)
  • Voltage forward (Vf) (Max) @ If: 1.9 V @ 4 A
  • Reverse recovery time (trr): 0 ns
  • Current reverse leakage @ Vr: 200 μA @ 600 V
  • Capacitance @ Vr, F: 150pF @ 1V, 1MHz
  • Operating temperature range: -55°C to 175°C
  • Package: die package

The SIDC11D60SIC3 is commonly used in applications such as power factor correction, solar inverters, and motor drives.

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