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Same model may have multiple batches, images only for reference.
SMBT3904PNE6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

SMBT3904PNE6327HTSA1

Part No SMBT3904PNE6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Arrays
Datasheet
SMBT3904PNE6327HTSA1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Obsolete
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Power - Max 250mW
Frequency - Transition 250MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO
Base Product Number SMBT 3904
Other Names SMBT 3904PN E6327,SP000014740,SMBT 3904PN E6327,SMBT3904PNE6327XT,SMBT3904PNE6327HTSA1TR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1278725-SMBT3904PNE6327HTSA1
Ultra Librarian 3D Model Ultra Librarian SMBT3904PNE6327HTSA1 CAD Model

Description

The Infineon Technologies SMBT3904PNE6327HTSA1 is a bipolar transistor array with NPN and PNP transistor type.

  • Package: Tape & reel (TR)
  • Standard Package: 3,000
  • Mounting: SMD (SMT)
  • Power - Max: 250mW
  • Voltage - Collector Emitter Breakdown (max): 40V
  • Current - Collector (Ic) (max): 200mA
  • Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (max): 50nA (ICBO)
  • DC Current Gain (hFE) (min) @ Ic, Vce: 100 @ 10mA, 1V
  • Frequency - Transition: 250MHz
  • Package/Case: 6-VSSOP, SC-88, SOT-363
  • Supplier Device Package: PG-SOT363-PO
  • Temperature Range for Operating: 150°C (TJ)

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