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Same model may have multiple batches, images only for reference.
SPA11N60C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

SPA11N60C3

Part No SPA11N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220-3
Datasheet
SPA11N60C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-31 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 090573-SPA11N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name SPA11N60C3
Introduction Date August 23, 2005
ECCN EAR99
Country of Origin China, Philippines
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian SPA11N60C3 CAD Model

Description

The Infineon Technologies MOSFET SPA11N60C3 is a high-popularity electronic component that is limited in terms of supply and demand.

  • Polarity: N-channel
  • Maximum Power Dissipation: 33W (Tc)
  • Continuous Drain Current @ 25°C: 11A (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Case/Package: PG-TO220-3-31 Full Pack

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60+ $1.6762 $100.5720
93+ $1.6238 $151.0134
128+ $1.5714 $201.1392
165+ $1.5190 $250.6350
221+ $1.3619 $300.9799
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