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Same model may have multiple batches, images only for reference.
SPA11N60CFDXKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPA11N60CFDXKSA1

Part No SPA11N60CFDXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220-3
Datasheet
SPA11N60CFDXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1.9mA
Max Gate Charge 64nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 440 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 130338-SPA11N60CFDXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPA11N60CFDXKSA1 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power MOSFET designed for use in a wide range of applications.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current @ 25°C: 11A
  • Gate-Source Threshold Voltage: 5V @ 1.9mA
  • Maximum Gate Charge: 64nC @ 10V
  • Package: PG-TO220-3
  • Maximum Power Dissipation: 33W (Tc)
  • Operating Temperature: -55°C to 150°C (TJ)
  • Status: Not in active production

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4198 $56.7920
90+ $1.1650 $104.8500
135+ $1.1286 $152.3610
185+ $1.0922 $202.0570
240+ $1.0558 $253.3920
320+ $0.9466 $302.9120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,800 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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