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Same model may have multiple batches, images only for reference.
SPA15N65C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

SPA15N65C3XKSA1

Part No SPA15N65C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15A TO220-3
Datasheet
SPA15N65C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 675μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 34W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 9.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Dimension TO-220-3 Full Pack
Win Source Part Number 1001590-SPA15N65C3XKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPA15N65C3XKSA1 CAD Model

Description

The Infineon Technologies 437731 is an N-channel MOSFET mounted on a through hole and packaged in a PG-TO220-3.

  • Drain-Source Breakdown Voltage: 650V
  • Maximum Power Dissipation: 34W (Tc)
  • Gate-Source Threshold Voltage: 3.9V @ 675μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 280 mOhm @ 9.4A, 10V
  • Continuous Drain Current: 15A (Tc) @ 25°C
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0897 $54.4850
115+ $0.8942 $102.8330
175+ $0.8662 $151.5850
240+ $0.8383 $201.1920
310+ $0.8103 $251.1930
415+ $0.7265 $301.4975
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Availability: 8,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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