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Same model may have multiple batches, images only for reference.
BTS112AE3045ANTMA1
Same model may have multiple batches, images only for reference.

BTS112AE3045ANTMA1

Part No BTS112AE3045ANTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series TEMPFET®
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150Ohm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 25 V
Power Dissipation (Max) 40W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 864858-BTS112AE3045ANTMA1
Ultra Librarian 3D Model Ultra Librarian BTS112AE3045ANTMA1 CAD Model

Description

The BTS112AE3045ANTMA1 is a N-Channel MOSFET from Infineon Technologies.

  • Series: TEMPFET®
  • Application: Discrete Semiconductor
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 12A
  • On-Resistance: 150 Ohm
  • Temperature Range: -55°C to 150°C
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Input Capacitance: 480 pF
  • Gate-Source Voltage: ±20V
  • Product Status: Obsolete

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