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Same model may have multiple batches, images only for reference.
SPB80N03S2L-04 Real Image
Same model may have multiple batches, images only for reference.

SPB80N03S2L-04

Part No SPB80N03S2L-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Datasheet
SPB80N03S2L-04 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 130μA
Max Gate Charge 105nC @ 10V
Max Input Capacitance 3900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 3.9 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1101485-SPB80N03S2L-04
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80N03S2L-04 CAD Model

Description

The SPB80N03S2L-04 is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 188W (Tc)
  • Supply and Demand Status: Balanced
  • Application: Various Electronic Applications
  • Package: PG-TO263-3-2
  • Mounting Type: SMD (SMT)
  • Maximum Rds On @ Id, Vgs: 3.9 mOhm @ 80A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)

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