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Same model may have multiple batches, images only for reference.
SPD35N10 Real Image
Same model may have multiple batches, images only for reference.

SPD35N10

Part No SPD35N10
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A DPAK
Datasheet
SPD35N10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Max Gate Charge 65nC @ 10V
Max Input Capacitance 1570pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 26.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1101555-SPD35N10
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SPD35N10 CAD Model

Description

The Infineon Technologies 429837 is an N-channel MOSFET designed for use in power management applications.

  • Power Dissipation: 150W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 35A
  • Maximum Rds On @ Id, Vgs: 44 mOhm @ 26.4A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 65nC @ 10V
  • Maximum Input Capacitance: 1570pF @ 25V
  • Package: PG-TO252-3
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Status: Obsolete (EOL)
  • Mounting Technology: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6526 $58.7340
220+ $0.5359 $117.8980
335+ $0.5186 $173.7310
460+ $0.5024 $231.1040
600+ $0.4851 $291.0600
800+ $0.4354 $348.3200
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Availability: 14,300 pieces
MOQ: 90 pcs
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