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Same model may have multiple batches, images only for reference.
SPI80N03S2L-03 Real Image
Same model may have multiple batches, images only for reference.

SPI80N03S2L-03

Part No SPI80N03S2L-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A I2PAK
Datasheet
SPI80N03S2L-03 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 8180pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3-1
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 042832-SPI80N03S2L-03
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SPI80N03S2L-03 CAD Model

Description

The Infineon Technologies SPI80N03S2L-03 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 80A @ Tc.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 80A @ Tc
  • Maximum Power Dissipation: 300W @ Tc
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 220nC @ 10V
  • Maximum Input Capacitance: 8180pF @ 25V
  • Maximum Rds On @ Id,Vgs: 3.1 mOhm @ 80A, 10V
  • Package: PG-TO262-3-1
  • Operating Temperature Range: -55°C to 175°C (TJ)

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