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Same model may have multiple batches, images only for reference.
SPU30P06P Real Image
Same model may have multiple batches, images only for reference.

SPU30P06P

Part No SPU30P06P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 30A IPAK
Datasheet
SPU30P06P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1.7mA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 1535pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 75 mOhm @ 21.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1101655-SPU30P06P
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SPU30P06P CAD Model

Description

The Infineon Technologies SPU30P06P is a P-Channel MOSFET with a maximum power dissipation of 125W (Tc) and a drain-source breakdown voltage of 60V.

  • Power Dissipation: 125W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 30A (Tc)
  • Rds On: 75 mOhm @ 21.5A, 10V
  • Gate-Source Threshold Voltage: 4V @ 1.7mA
  • Gate Charge: 48nC @ 10V
  • Input Capacitance: 1535pF @ 25V
  • Package: PG-TO251-3
  • Mounting Type: Through Hole
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)

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